Research FellowUniversity

Location: Coventry, GB, CV4 7AL

Fixed Term End Date: 30 September 2029

Hours: Full-time (1.0 FTE)

Closing Date: Thursday 10 December 2026, 11:59pm (UK)

About the Role

The Semiconductor Research Group (https://warwick.ac.uk/silicon) in the Department of Physics at the University of Warwick is recruiting a Research Fellow with outstanding experimental skills in semiconductor materials science and cryogenic electrical characterisation.

The appointment supports a collaborative EPSRC–NSF project with the California Institute of Technology (Caltech), USA: “Towards Ultralow-Noise SiGe Heterojunction Bipolar Transistors for Quantum Technology and Beyond: Epitaxial Engineering of Cryogenic Charge Transport.”

The research investigates how epitaxial layer design, alloy composition, strain, doping, interfaces and defects govern the electrical characteristics of SiGe heterojunctions and ultimately the cryogenic performance of SiGe heterojunction bipolar transistors (HBTs).

You will investigate Si/SiGe heterostructures grown using Warwick’s in-house reduced-pressure chemical vapour deposition (RP-CVD) facilities.

A defining element of the role is independently performing and interpreting current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G–V) measurements over temperatures from room temperature down to approximately 2 K. This includes assessment of bias-, frequency- and temperature-dependent effects, experimental artefacts, and the physical mechanisms responsible for non-ideal junction behaviour.

You will integrate these results with rigorous structural and materials characterisation, particularly cross-sectional transmission electron microscopy (XTEM/TEM), high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM) and relevant complementary methods.

Your findings will inform the interpretation and optimisation of SiGe epitaxial heterostructures and provide the materials perspective for the international project team.

HBT device fabrication is undertaken by collaborators, not at Warwick. Where relevant, the role may include focused ion beam (FIB) specimen preparation and SEM/XTEM characterisation of collaborator-fabricated HBTs.

You will benefit from specialist semiconductor and low-temperature measurement facilities, scientific collaboration with Caltech and opportunities to publish and present internationally.

This is a laboratory-based experimental research position requiring full-time on-site working at the University of Warwick. The successful candidate will be expected to work in person within the Semiconductor Research Group's laboratories and research facilities. Due to the hands-on nature of the experimental activities, including specialist semiconductor materials characterisation and cryogenic electrical measurements, remote or hybrid working arrangements are not available for this position.

For details on the experience and skills required, please refer to the job description (link here).

Right to Work in the UK

If you do not yet have the right to work in the UK and/or are seeking sponsorship for a Skilled Worker visa, please follow this link which contains further information about obtaining the right to work in the UK.

£36,320 to £46,970 per annum