Research Fellow in III-V Epitaxy for OptoelectronicsUniversity

Location: Highfield Campus

Term: Full Time, Fixed Term until 31/05/2028

Interview Date: To be confirmed

We are seeking a highly motivated Research Fellow with expertise in semiconductor epitaxy to join the Optoelectronics Research Centre (ORC) at the University of Southampton, one of the world's leading centres for photonics research.

The successful candidate will join a multidisciplinary team developing advanced III-V semiconductor materials and integrated optoelectronic devices on silicon. The research programme focuses on the development of innovative epitaxial growth technologies for the integration of III-V materials on silicon and other lattice-mismatched platforms, enabling next-generation photonic devices for optical communications, sensing and emerging quantum technologies.

The role will involve the growth and optimisation of III-V semiconductor materials using Metalorganic Vapour Phase Epitaxy (MOVPE), together with the optical, electrical and structural characterisation of materials and devices. The successful candidate will also contribute to device fabrication and integration activities within Southampton's internationally renowned silicon photonics and nanofabrication facilities.

During the initial phase of the project, the postholder will work closely with external epitaxy facilities and project partners to undertake growth campaigns and advance the research programme while new III-V epitaxy infrastructure is established at Southampton. The role will therefore involve travel to partner organisations and requires the ability to work independently, and confidence in collaborating effectively with academic and industrial partners.

You should hold a PhD (or near completion) in Electronic Engineering, Photonics, Physics, or a closely related discipline. Hands-on experience in the epitaxial growth of III-V semiconductors, including III-As/P/Sb and/or III-nitride materials using metal-organic vapour phase epitaxy (MOVPE) or molecular beam epitaxy (MBE), is essential. Experience in semiconductor device fabrication, cleanroom processing, and optical or electrical characterisation techniques is highly desirable.

The successful candidate will have a strong publication record relative to career stage, excellent communication skills, and the ability to contribute effectively to a collaborative research environment spanning multiple institutions and industrial partners. You will be expected to disseminate research findings through high-quality publications and conference presentations, while helping to develop new research directions and collaborative opportunities.

Further details:

Job Description and Person Specification

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£36,636 to £44,746. Per annum